AP30G120ASW Datasheet, Advanced Power Electronics

AP30G120ASW transistor equivalent, n-channel insulated gate bipolar transistor.

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Features and benefits

▼ High Speed Switching ▼ Low Saturation Voltage V CE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. VCE.

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Advanced Power Electronics

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